BD140G
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- Mfr.Part #
- BD140G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO126
- Stock
- 181
- In Stock ：
- 181
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 500mV
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 25
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Length :
- 6.35mm
- Max Collector Current :
- 1.5A
- Voltage - Rated DC :
- -80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 1.25W
- Number of Pins :
- 3
- Published :
- 2001
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Width :
- 6.35mm
- Max Power Dissipation :
- 1.25W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Height :
- 6.35mm
- Surface Mount :
- No
- Base Part Number :
- BD140
- Current Rating :
- 1.5A
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Bulk
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- BD140G
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PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD140G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD140G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD140G Applications
There are a lot of ON Semiconductor
BD140G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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