BD140G
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- Mfr.Part #
- BD140G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO126
- Stock
- 181
- In Stock ：
- 181
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Width :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Height :
- 6.35mm
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 25
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Base Part Number :
- BD140
- Pin Count :
- 3
- Voltage - Rated DC :
- -80V
- Max Power Dissipation :
- 1.25W
- Published :
- 2001
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 100V
- Weight :
- 4.535924g
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Current Rating :
- 1.5A
- Power Dissipation :
- 1.25W
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Length :
- 6.35mm
- Surface Mount :
- No
- Datasheets
- BD140G
BD140G Documents
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PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD140G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD140G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD140G Applications
There are a lot of ON Semiconductor
BD140G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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