BD140

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

Isolated

Operating Temperature :

150°C TJ

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

80V

Width :

2.7mm

Transistor Type :

PNP

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

ECCN Code :

EAR99

Mounting Type :

Through Hole

Height :

10.8mm

Number of Elements :

1

Base Part Number :

BD140

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

80V

Packaging :

Tube

Collector Emitter Breakdown Voltage :

80V

Current Rating :

-1.5A

Package / Case :

TO-225AA, TO-126-3

Length :

7.8mm

Transistor Element Material :

SILICON

Transition Frequency :

75MHz

Number of Pins :

3

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

hFE Min :

40

Max Collector Current :

3A

Element Configuration :

Single

REACH SVHC :

No SVHC

Weight :

4.535924g

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Current - Collector (Ic) (Max) :

1.5A

Collector Emitter Voltage (VCEO) :

80V

Power Dissipation :

1.25W

Voltage - Rated DC :

-80V

Max Power Dissipation :

1.25W

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Mount :

Through Hole