BD140

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

hFE Min :

40

Current - Collector (Ic) (Max) :

1.5A

Max Collector Current :

3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

ECCN Code :

EAR99

Power Dissipation :

1.25W

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

3

Length :

7.8mm

REACH SVHC :

No SVHC

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

80V

Collector Emitter Saturation Voltage :

500mV

JESD-609 Code :

e3

Transistor Type :

PNP

Contact Plating :

Tin

Packaging :

Tube

Width :

2.7mm

Package / Case :

TO-225AA, TO-126-3

Operating Temperature :

150°C TJ

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Height :

10.8mm

Max Power Dissipation :

1.25W

Voltage - Rated DC :

-80V

Polarity/Channel Type :

PNP

Number of Pins :

3

Weight :

4.535924g

Number of Elements :

1

Transistor Application :

AMPLIFIER

Case Connection :

Isolated

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Transition Frequency :

75MHz

Collector Base Voltage (VCBO) :

80V

Base Part Number :

BD140

Mount :

Through Hole

Radiation Hardening :

No

Transistor Element Material :

SILICON

Current Rating :

-1.5A