BD14010STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Current Rating :

-1.5A

Transistor Element Material :

SILICON

Package / Case :

TO-225AA, TO-126-3

Number of Elements :

1

Factory Lead Time :

6 Weeks

Published :

2000

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-5V

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Max Power Dissipation :

12.5W

hFE Min :

40

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Collector Base Voltage (VCBO) :

-80V

Height :

11mm

Polarity/Channel Type :

PNP

Weight :

761mg

Max Collector Current :

1.5A

Number of Terminations :

3

Length :

8mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Voltage - Rated DC :

-80V

ECCN Code :

EAR99

Base Part Number :

BD140

Contact Plating :

Tin

Pbfree Code :

yes

Mounting Type :

Through Hole

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-500mV

Packaging :

Tube

Transistor Type :

PNP

JESD-609 Code :

e3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Width :

3.25mm

Transistor Application :

SWITCHING

Power Dissipation :

1.25W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Pins :

3

Collector Emitter Breakdown Voltage :

80V