BD140-16

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

-3A

Collector Emitter Saturation Voltage :

-500mV

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2V 150MA

JESD-609 Code :

e3

Radiation Hardening :

No

Manufacturer Package Identifier :

SOT-32-0016114E

Height :

13.2mm

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Width :

2.7mm

Emitter Base Voltage (VEBO) :

-5V

Mounting Type :

Through Hole

Base Part Number :

BD140

Element Configuration :

Single

REACH SVHC :

No SVHC

Max Power Dissipation :

1.25W

Number of Pins :

3

Package / Case :

TO-225AA, TO-126-3

Collector Base Voltage (VCBO) :

-80V

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

1.25W

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

8 Weeks

Transition Frequency :

75MHz

ECCN Code :

EAR99

hFE Min :

25

Contact Plating :

Tin

Polarity/Channel Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 6 months ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

-80V

Operating Temperature :

150°C TJ

Current - Collector (Ic) (Max) :

1.5A

Mount :

Through Hole

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

7.8mm

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

Transistor Element Material :

SILICON