BD139G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

7.74mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Power Dissipation :

1.25W

Collector Emitter Saturation Voltage :

500mV

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Radiation Hardening :

No

Factory Lead Time :

9 Weeks

JESD-609 Code :

e3

Packaging :

Bulk

Mounting Type :

Through Hole

Element Configuration :

Single

Height :

11.04mm

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Width :

2.66mm

Transistor Type :

NPN

Surface Mount :

No

Pin Count :

3

Number of Terminations :

3

hFE Min :

25

Collector Emitter Voltage (VCEO) :

80V

Number of Pins :

3

Voltage - Rated DC :

80V

Collector Base Voltage (VCBO) :

80V

Max Collector Current :

1.5A

Power Dissipation :

1.25W

Current Rating :

1.5A

Published :

1999

Weight :

4.535924g

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Package / Case :

TO-225AA, TO-126-3

Pbfree Code :

yes

Base Part Number :

BD139

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)