BD135

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Pin Count :

3

Number of Elements :

1

Transistor Application :

AMPLIFIER

Length :

7.8mm

Weight :

4.535924g

Max Collector Current :

1.5A

Element Configuration :

Single

Collector Base Voltage (VCBO) :

45V

hFE Min :

25

Max Power Dissipation :

1.25W

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Mount :

Through Hole

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

2.7mm

Base Part Number :

BD135

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Height :

10.8mm

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Pins :

3

Packaging :

Tube

Package / Case :

TO-225AA, TO-126-3

REACH SVHC :

No SVHC

Power Dissipation :

1.25W

JESD-609 Code :

e3

Max Breakdown Voltage :

45V

Transition Frequency :

250MHz

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

45V

Lead Free :

Lead Free

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

5V