BD13516S
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- Mfr.Part #
- BD13516S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126-3
- Stock
- 1,928
- In Stock ：
- 1,928
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.25W
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Current Rating :
- 1.5A
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 45V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Element Configuration :
- Single
- hFE Min :
- 40
- Max Collector Current :
- 1.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.25W
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Base Part Number :
- BD135
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 45V
- Published :
- 2013
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 761mg
- JESD-609 Code :
- e3
- Transition Frequency :
- 250MHz
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Datasheets
- BD13516S
BD13516S Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13516S Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 1.5A volts.
BD13516S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz
BD13516S Applications
There are a lot of ON Semiconductor
BD13516S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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