BD135-16
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- Mfr.Part #
- BD135-16
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A SOT32
- Stock
- 7,172
- In Stock ：
- 7,172
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Mount :
- Through Hole
- Packaging :
- Tube
- Transition Frequency :
- 250MHz
- Power Dissipation :
- 1.25W
- Collector Base Voltage (VCBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 100
- Transistor Type :
- NPN
- Height :
- 10.8mm
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 7.8mm
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Base Part Number :
- BD135
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.25W
- Collector Emitter Voltage (VCEO) :
- 45V
- Width :
- 2.7mm
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- BD135-16
BD135-16 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD135-16 Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
BD135-16 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BD135-16 Applications
There are a lot of STMicroelectronics
BD135-16 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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