BD1396STU
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- Mfr.Part #
- BD1396STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO126-3
- Stock
- 51,837
- In Stock ：
- 51,837
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 40
- Max Collector Current :
- 1.5A
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Weight :
- 761mg
- Max Power Dissipation :
- 12.5W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 6 Weeks
- Contact Plating :
- Tin
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Length :
- 8.3mm
- Collector Emitter Saturation Voltage :
- 500mV
- Width :
- 3.45mm
- Height :
- 11.2mm
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-225AA, TO-126-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 250MHz
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Current Rating :
- 1.5A
- Base Part Number :
- BD139
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Power Dissipation :
- 1.25W
- Published :
- 2013
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- BD1396STU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD1396STU Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 1.5A volts is possible.
BD1396STU Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz
BD1396STU Applications
There are a lot of ON Semiconductor
BD1396STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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