BD13916STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Power Dissipation :

1.25W

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

Width :

3.25mm

Radiation Hardening :

No

Current Rating :

1.5A

Length :

8mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Lead Free :

Lead Free

Mount :

Through Hole

Base Part Number :

BD139

Packaging :

Tube

Height :

11mm

Pbfree Code :

yes

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

80V

REACH SVHC :

No SVHC

Max Collector Current :

1.5A

Contact Plating :

Tin

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Published :

2011

Max Power Dissipation :

1.25W

Number of Terminations :

3

Factory Lead Time :

22 Weeks

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Weight :

761mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Number of Pins :

3

Transistor Application :

SWITCHING

Voltage - Rated DC :

80V

Number of Elements :

1

hFE Min :

40

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

500mV

Package / Case :

TO-225AA, TO-126-3

Transistor Type :

NPN