BD13916S
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- Mfr.Part #
- BD13916S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO126-3
- Stock
- 1,901
- In Stock ：
- 1,901
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.25W
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1.5A
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Current Rating :
- 1.5A
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Number of Pins :
- 3
- hFE Min :
- 40
- Weight :
- 761mg
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 22 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Length :
- 8mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Base Part Number :
- BD139
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1.25W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Width :
- 3.25mm
- Published :
- 2013
- Collector Emitter Voltage (VCEO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Height :
- 11mm
- Termination :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD13916S
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13916S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13916S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD13916S Applications
There are a lot of ON Semiconductor
BD13916S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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