BD13916S
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- Mfr.Part #
- BD13916S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO126-3
- Stock
- 1,901
- In Stock ：
- 1,901
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Power Dissipation :
- 1.25W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Factory Lead Time :
- 22 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 1.25W
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.25mm
- Base Part Number :
- BD139
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Current Rating :
- 1.5A
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Published :
- 2013
- Weight :
- 761mg
- Packaging :
- Bulk
- Number of Elements :
- 1
- Height :
- 11mm
- Length :
- 8mm
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Qualification Status :
- Not Qualified
- Termination :
- Through Hole
- Max Collector Current :
- 1.5A
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 40
- Datasheets
- BD13916S
BD13916S Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13916S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13916S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD13916S Applications
There are a lot of ON Semiconductor
BD13916S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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