BD13910STU
- Mfr.Part #
- BD13910STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO126-3
- Stock
- 21,754
- In Stock :
- 21,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Transition Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-225AA, TO-126-3
- Current Rating :
- 1.5A
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1.25W
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 11.2mm
- Weight :
- 761mg
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 80V
- Mount :
- Through Hole
- Max Collector Current :
- 1.5A
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Width :
- 3.45mm
- Number of Pins :
- 3
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Length :
- 8.3mm
- Power Dissipation :
- 1.25W
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Base Part Number :
- BD139
- Datasheets
- BD13910STU

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).250MHz is present in the transition frequency.Maximum collector currents can be below 1.5A volts.
BD13910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz
BD13910STU Applications
There are a lot of ON Semiconductor
BD13910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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