BD13910STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

3.45mm

Number of Terminations :

3

Number of Elements :

1

ECCN Code :

EAR99

Current Rating :

1.5A

Packaging :

Tube

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

150°C TJ

Max Collector Current :

1.5A

Voltage - Rated DC :

80V

Contact Plating :

Tin

Transistor Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JESD-609 Code :

e3

Published :

2013

Package / Case :

TO-225AA, TO-126-3

Length :

8.3mm

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Base Part Number :

BD139

Collector Base Voltage (VCBO) :

80V

Transition Frequency :

250MHz

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Pbfree Code :

yes

Number of Pins :

3

Transistor Element Material :

SILICON

Max Power Dissipation :

1.25W

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

761mg

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

hFE Min :

40

Element Configuration :

Single

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

80V

Height :

11.2mm

Mounting Type :

Through Hole