BD13910STU

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Mfr.Part #
BD13910STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 1.5A TO126-3
Stock
21,754
In Stock :
21,754

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Transition Frequency :
250MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
hFE Min :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Breakdown Voltage :
80V
Emitter Base Voltage (VEBO) :
5V
Transistor Element Material :
SILICON
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Qualification Status :
Not Qualified
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
80V
Package / Case :
TO-225AA, TO-126-3
Current Rating :
1.5A
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Power Dissipation :
1.25W
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
11.2mm
Weight :
761mg
Number of Terminations :
3
Number of Elements :
1
Operating Temperature :
150°C TJ
Voltage - Rated DC :
80V
Mount :
Through Hole
Max Collector Current :
1.5A
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
80V
Width :
3.45mm
Number of Pins :
3
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Length :
8.3mm
Power Dissipation :
1.25W
Factory Lead Time :
6 Weeks
Transistor Application :
SWITCHING
Collector Emitter Saturation Voltage :
500mV
Transistor Type :
NPN
ECCN Code :
EAR99
Base Part Number :
BD139
Datasheets
BD13910STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13910STU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:BD139, BD13910STU pinout, BD13910STU datasheet PDF, BD13910STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13910STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13910STU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

BD13910STU Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).250MHz is present in the transition frequency.Maximum collector currents can be below 1.5A volts.

BD13910STU Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD13910STU Applications


There are a lot of ON Semiconductor
BD13910STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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