BD139

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Base Part Number :

BD139

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Transistor Element Material :

SILICON

Number of Pins :

3

Polarity/Channel Type :

NPN

Max Power Dissipation :

1.25W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

40

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Length :

7.8mm

Operating Temperature :

150°C TJ

Number of Terminations :

3

Manufacturer Package Identifier :

SOT-32-0016114E

Case Connection :

Isolated

Collector Emitter Breakdown Voltage :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Collector Emitter Saturation Voltage :

500mV

ECCN Code :

EAR99

Contact Plating :

Tin

Max Collector Current :

1.5A

Mount :

Through Hole

Power Dissipation :

1.25W

Width :

2.9mm

Transistor Type :

NPN

Height :

13.2mm

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

Max Junction Temperature (Tj) :

150°C

Transition Frequency :

250MHz

Voltage - Rated DC :

80V

Number of Elements :

1

Weight :

90.718474mg

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Lead Free :

Lead Free

Packaging :

Tube

Pin Count :

3

Collector Base Voltage (VCBO) :

80V

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-225AA, TO-126-3

Current Rating :

1.5A