BD139

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Height :

13.2mm

Mount :

Through Hole

Factory Lead Time :

8 Weeks

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Rated DC :

80V

Current Rating :

1.5A

Length :

7.8mm

Manufacturer Package Identifier :

SOT-32-0016114E

Contact Plating :

Tin

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

80V

Base Part Number :

BD139

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Package / Case :

TO-225AA, TO-126-3

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Transition Frequency :

250MHz

Max Collector Current :

1.5A

Lead Free :

Lead Free

Weight :

90.718474mg

Case Connection :

Isolated

Power Dissipation :

1.25W

Packaging :

Tube

Width :

2.9mm

hFE Min :

40

Collector Emitter Breakdown Voltage :

80V

Number of Elements :

1

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Power Dissipation :

1.25W

Number of Terminations :

3

Max Junction Temperature (Tj) :

150°C