BD139-10

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Mfr.Part #
BD139-10
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 1.5A SOT32
Stock
9
In Stock :
9

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Number of Pins :
3
Collector Emitter Saturation Voltage :
500mV
Operating Temperature :
150°C TJ
Factory Lead Time :
8 Weeks
Length :
7.8mm
Mounting Type :
Through Hole
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
Height :
10.8mm
Collector Base Voltage (VCBO) :
80V
Packaging :
Tube
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
1.25W
Transistor Application :
AMPLIFIER
Contact Plating :
Tin
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 6 months ago)
Max Collector Current :
1.5A
Transistor Element Material :
SILICON
Radiation Hardening :
No
Number of Channels :
1
Base Part Number :
BD139
Collector Emitter Voltage (VCEO) :
80V
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
JESD-609 Code :
e3
Transition Frequency :
250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Width :
2.7mm
Power Dissipation :
1.25W
REACH SVHC :
No SVHC
hFE Min :
63
Polarity/Channel Type :
NPN
Number of Elements :
1
Collector Emitter Breakdown Voltage :
80V
Pin Count :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD139-10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Number of Channels:1, Base Part Number:BD139, BD139-10 pinout, BD139-10 datasheet PDF, BD139-10 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD139-10 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD139-10


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

BD139-10 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.

BD139-10 Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz


BD139-10 Applications


There are a lot of STMicroelectronics
BD139-10 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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