BD139-10
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- Mfr.Part #
- BD139-10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A SOT32
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.25W
- Power Dissipation :
- 1.25W
- Mount :
- Through Hole
- Transition Frequency :
- 250MHz
- Collector Emitter Saturation Voltage :
- 500mV
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 63
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 2.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 months ago)
- Transistor Type :
- NPN
- Base Part Number :
- BD139
- Contact Plating :
- Tin
- Pin Count :
- 3
- Height :
- 10.8mm
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Number of Channels :
- 1
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Length :
- 7.8mm
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Datasheets
- BD139-10
BD139-10 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD139-10 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
BD139-10 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BD139-10 Applications
There are a lot of STMicroelectronics
BD139-10 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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