BD138G

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Mfr.Part #
BD138G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 1.5A TO126
Stock
556
In Stock :
556

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2001
Height :
11.04mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150°C
Radiation Hardening :
No
Min Operating Temperature :
-55°C
Power - Max :
1.25W
Contact Plating :
Tin
Voltage - Collector Emitter Breakdown (Max) :
60V
Polarity :
PNP
Mounting Type :
Through Hole
Power Dissipation :
1.25W
Number of Pins :
3
Factory Lead Time :
5 Weeks
Lead Free :
Lead Free
Current Rating :
-1.5A
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Element Configuration :
Single
Transition Frequency :
50MHz
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Breakdown Voltage :
60V
Voltage - Rated DC :
-60V
hFE Min :
25
Max Collector Current :
1.5A
Max Power Dissipation :
1.25W
Current - Collector (Ic) (Max) :
1.5A
Supplier Device Package :
TO-225AA
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Width :
2.66mm
Base Part Number :
BD138
Length :
7.74mm
Packaging :
Bulk
Collector Base Voltage (VCBO) :
60V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Max Breakdown Voltage :
60V
Collector Emitter Voltage (VCEO) :
60V
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
500mV
REACH SVHC :
No SVHC
Datasheets
BD138G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD138G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD138, BD138G pinout, BD138G datasheet PDF, BD138G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD138G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD138G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements TO-225AA, TO-126-3 Bulk Through Hole

BD138G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 60V volts.This product comes in a TO-225AA device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

BD138G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
the supplier device package of TO-225AA


BD138G Applications


There are a lot of ON Semiconductor
BD138G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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