BD138G
- Mfr.Part #
- BD138G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.5A TO126
- Stock
- 556
- In Stock :
- 556
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Height :
- 11.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Power - Max :
- 1.25W
- Contact Plating :
- Tin
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Polarity :
- PNP
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1.25W
- Number of Pins :
- 3
- Factory Lead Time :
- 5 Weeks
- Lead Free :
- Lead Free
- Current Rating :
- -1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Element Configuration :
- Single
- Transition Frequency :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- hFE Min :
- 25
- Max Collector Current :
- 1.5A
- Max Power Dissipation :
- 1.25W
- Current - Collector (Ic) (Max) :
- 1.5A
- Supplier Device Package :
- TO-225AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Width :
- 2.66mm
- Base Part Number :
- BD138
- Length :
- 7.74mm
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- REACH SVHC :
- No SVHC
- Datasheets
- BD138G
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PNP -55°C~150°C TJ 100nA ICBO 1 Elements TO-225AA, TO-126-3 Bulk Through Hole
BD138G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 60V volts.This product comes in a TO-225AA device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD138G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
the supplier device package of TO-225AA
BD138G Applications
There are a lot of ON Semiconductor
BD138G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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