BD1386S
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- Mfr.Part #
- BD1386S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.5A TO126-3
- Stock
- 40,518
- In Stock ：
- 40,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 1.25W
- Base Part Number :
- BD138
- Mounting Type :
- Through Hole
- Datasheets
- BD1386S
PNP 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole
BD1386S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
BD1386S Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BD1386S Applications
There are a lot of ON Semiconductor
BD1386S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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