BD13816STU

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Mfr.Part #
BD13816STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 1.5A TO126-3
Stock
10,154
In Stock :
10,154

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Contact Plating :
Tin
ECCN Code :
EAR99
Max Power Dissipation :
12.5W
Current - Collector Cutoff (Max) :
100nA ICBO
Operating Temperature :
150°C TJ
Height :
11mm
Length :
8mm
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Emitter Base Voltage (VEBO) :
-5V
Lead Free :
Lead Free
Radiation Hardening :
No
Width :
3.25mm
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-60V
Collector Emitter Breakdown Voltage :
60V
Package / Case :
TO-225AA, TO-126-3
Packaging :
Tube
Collector Emitter Saturation Voltage :
-500mV
Published :
2000
Base Part Number :
BD138
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
1.5A
Number of Elements :
1
Mount :
Through Hole
Current Rating :
-1.5A
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Collector Base Voltage (VCBO) :
-60V
Polarity/Channel Type :
PNP
Transistor Element Material :
SILICON
Power Dissipation :
1.25W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
hFE Min :
40
JESD-609 Code :
e3
Factory Lead Time :
19 Weeks
Weight :
761mg
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Transistor Type :
PNP
Collector Emitter Voltage (VCEO) :
60V
Number of Pins :
3
Datasheets
BD13816STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13816STU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD138, Number of Terminations:3, Number of Pins:3, BD13816STU pinout, BD13816STU datasheet PDF, BD13816STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13816STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13816STU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD13816STU Overview


DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.5A current rating.In extreme cases, the collector current can be as low as 1.5A volts.

BD13816STU Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A


BD13816STU Applications


There are a lot of ON Semiconductor
BD13816STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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