BD13816STU
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- Mfr.Part #
- BD13816STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.5A TO126-3
- Stock
- 10,154
- In Stock ：
- 10,154
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 19 Weeks
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Current Rating :
- -1.5A
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -500mV
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Published :
- 2000
- Weight :
- 761mg
- hFE Min :
- 40
- Base Part Number :
- BD138
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Height :
- 11mm
- Power Dissipation :
- 1.25W
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Length :
- 8mm
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Width :
- 3.25mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 12.5W
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -60V
- Datasheets
- BD13816STU
BD13816STU Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD13816STU Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.5A current rating.In extreme cases, the collector current can be as low as 1.5A volts.
BD13816STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
BD13816STU Applications
There are a lot of ON Semiconductor
BD13816STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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