BD13816S
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- Mfr.Part #
- BD13816S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.5A TO126-3
- Stock
- 5,633
- In Stock ：
- 5,633
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -60V
- JESD-609 Code :
- e3
- Base Part Number :
- BD138
- hFE Min :
- 40
- Number of Pins :
- 3
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 761mg
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- -1.5A
- Max Power Dissipation :
- 1.25W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Max Collector Current :
- 1.5A
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -60V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.25W
- Collector Emitter Saturation Voltage :
- -500mV
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Datasheets
- BD13816S
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD13816S Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
BD13816S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
BD13816S Applications
There are a lot of ON Semiconductor
BD13816S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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