BD13810STU
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- Mfr.Part #
- BD13810STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.5A TO126-3
- Stock
- 15,543
- In Stock ：
- 15,543
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- -500mV
- Transistor Type :
- PNP
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Width :
- 3.25mm
- Max Collector Current :
- 1.5A
- Pbfree Code :
- yes
- Base Part Number :
- BD138
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -1.5A
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Height :
- 11mm
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Mount :
- Through Hole
- Weight :
- 761mg
- Transistor Element Material :
- SILICON
- Length :
- 8mm
- Collector Base Voltage (VCBO) :
- -60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- -60V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.25W
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 1.25W
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BD13810STU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD13810STU Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.In this part, there is a transition frequency of 3MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 1.5A volts.
BD13810STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 3MHz
BD13810STU Applications
There are a lot of ON Semiconductor
BD13810STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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