BD13810STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

hFE Min :

40

Number of Pins :

3

Number of Terminations :

3

Packaging :

Tube

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Weight :

761mg

Base Part Number :

BD138

Number of Elements :

1

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Radiation Hardening :

No

Max Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

-500mV

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Voltage - Rated DC :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1.5A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Current Rating :

-1.5A

Element Configuration :

Single

Transition Frequency :

3MHz

Collector Emitter Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

-5V

Package / Case :

TO-225AA, TO-126-3

Height :

11mm

Mount :

Through Hole

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

-60V

Factory Lead Time :

6 Weeks

Width :

3.25mm

Length :

8mm

Power Dissipation :

1.25W

Contact Plating :

Tin

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Max Power Dissipation :

1.25W