BD137G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

BD137

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Number of Terminations :

3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Radiation Hardening :

No

Package / Case :

TO-225AA, TO-126-3

Power Dissipation :

65W

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Collector Current :

1.5A

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

4.535924g

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

60V

Element Configuration :

Single

Mounting Type :

Through Hole

Factory Lead Time :

2 Weeks

Max Power Dissipation :

1.25W

Transistor Type :

NPN

Surface Mount :

No

Number of Elements :

1

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

260

Height :

11.04mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Packaging :

Bulk

Number of Pins :

3

Current Rating :

6A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Published :

2001

Width :

2.66mm

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Voltage (VCEO) :

60V

hFE Min :

25

Pin Count :

3

Power - Max :

1.25W

Lead Free :

Lead Free

Length :

7.74mm

Contact Plating :

Tin