BD1376STU
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- Mfr.Part #
- BD1376STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126-3
- Stock
- 6,656
- In Stock ：
- 6,656
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 1.5A
- Packaging :
- Tube
- Base Part Number :
- BD137
- Package / Case :
- TO-225AA, TO-126-3
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Power - Max :
- 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BD1376STU
NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Tube Through Hole
BD1376STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
BD1376STU Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BD1376STU Applications
There are a lot of ON Semiconductor
BD1376STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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