BD1376S
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- Mfr.Part #
- BD1376S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126-3
- Stock
- 8,659
- In Stock ：
- 8,659
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Base Part Number :
- BD137
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Power - Max :
- 1.25W
- Supplier Device Package :
- TO-126-3
- Datasheets
- BD1376S
NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole
BD1376S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD1376S Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-126-3
BD1376S Applications
There are a lot of ON Semiconductor
BD1376S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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