BD13716STU
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- Mfr.Part #
- BD13716STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126-3
- Stock
- 408
- In Stock ：
- 408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Height :
- 11mm
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Max Collector Current :
- 1.5A
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 1.25W
- Element Configuration :
- Single
- Power Dissipation :
- 1.25W
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Weight :
- 761mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BD137
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Published :
- 2000
- Current Rating :
- 1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Through Hole
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 60V
- Width :
- 3.25mm
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 3
- Length :
- 8mm
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- BD13716STU
BD13716STU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13716STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD13716STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD13716STU Applications
There are a lot of ON Semiconductor
BD13716STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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