BD13716STU
- Mfr.Part #
- BD13716STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126-3
- Stock
- 408
- In Stock :
- 408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- hFE Min :
- 40
- Length :
- 8mm
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2000
- Packaging :
- Tube
- Max Collector Current :
- 1.5A
- Weight :
- 761mg
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- BD137
- Transistor Application :
- SWITCHING
- Width :
- 3.25mm
- Mount :
- Through Hole
- Power Dissipation :
- 1.25W
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Height :
- 11mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Datasheets
- BD13716STU

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13716STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD13716STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD13716STU Applications
There are a lot of ON Semiconductor
BD13716STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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