BD13716S

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Mfr.Part #
BD13716S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 60V 1.5A TO126-3
Stock
7,142
In Stock :
7,142

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
60V
Termination :
Through Hole
hFE Min :
40
Factory Lead Time :
2 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Transition Frequency :
50MHz
Weight :
761mg
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
60V
Voltage - Rated DC :
60V
Base Part Number :
BD137
Number of Elements :
1
Max Power Dissipation :
1.25W
Packaging :
Bulk
Transistor Application :
SWITCHING
Polarity/Channel Type :
NPN
REACH SVHC :
No SVHC
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Current Rating :
1.5A
Contact Plating :
Tin
Mount :
Through Hole
Number of Pins :
3
Power Dissipation :
1.25W
Transistor Type :
NPN
Max Breakdown Voltage :
60V
Radiation Hardening :
No
Published :
2013
Max Collector Current :
1.5A
Package / Case :
TO-225AA, TO-126-3
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Number of Terminations :
3
Collector Emitter Saturation Voltage :
500mV
Lead Free :
Lead Free
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
BD13716S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13716S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD137, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, BD13716S pinout, BD13716S datasheet PDF, BD13716S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13716S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13716S


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD13716S Overview


DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1.5A volts.

BD13716S Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz


BD13716S Applications


There are a lot of ON Semiconductor
BD13716S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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