BD13710S
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- Mfr.Part #
- BD13710S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126-3
- Stock
- 2,316
- In Stock ：
- 2,316
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 761mg
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Through Hole
- Max Power Dissipation :
- 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Current Rating :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Package / Case :
- TO-225AA, TO-126-3
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 1.5A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 1.25W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Rated DC :
- 60V
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Base Part Number :
- BD137
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Datasheets
- BD13710S
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13710S Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
BD13710S Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz
BD13710S Applications
There are a lot of ON Semiconductor
BD13710S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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