BD13710S

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Mfr.Part #
BD13710S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 60V 1.5A TO126-3
Stock
2,316
In Stock :
2,316

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Transition Frequency :
250MHz
Weight :
761mg
RoHS Status :
RoHS Compliant
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
60V
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
BD137
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
hFE Min :
40
Transistor Element Material :
SILICON
Max Power Dissipation :
1.25W
Power Dissipation :
1.25W
Element Configuration :
Single
Transistor Application :
SWITCHING
Packaging :
Bulk
JESD-30 Code :
R-PSFM-T3
Transistor Type :
NPN
Number of Terminations :
3
Number of Elements :
1
Max Collector Current :
1.5A
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
60V
Current Rating :
1.5A
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Collector Emitter Voltage (VCEO) :
60V
Package / Case :
TO-225AA, TO-126-3
Lead Free :
Lead Free
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
500mV
ECCN Code :
EAR99
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13710S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:BD137, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, BD13710S pinout, BD13710S datasheet PDF, BD13710S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13710S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13710S


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD13710S Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

BD13710S Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD13710S Applications


There are a lot of ON Semiconductor
BD13710S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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