BD137
- Mfr.Part #
- BD137
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126
- Stock
- 43,752
- In Stock :
- 43,752
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 60V
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Power - Max :
- 1.25W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power Dissipation :
- 65W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Surface Mount :
- No
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- hFE Min :
- 25
- Element Configuration :
- Single
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Max Collector Current :
- 1.5A
- REACH SVHC :
- No SVHC
- Published :
- 2001
- Transistor Type :
- NPN
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1.25W
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Current Rating :
- 6A
- Base Part Number :
- BD137
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 7.74mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 2.66mm
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 11.04mm
- Datasheets
- BD137
BD137 Documents
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NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD137G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 1.5A volts at its maximum.
BD137G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 6A
BD137G Applications
There are a lot of ON Semiconductor
BD137G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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