BD137

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Mfr.Part #
BD137
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 60V 1.5A TO126
Stock
43,752
In Stock :
43,752

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Number of Pins :
3
Emitter Base Voltage (VEBO) :
5V
Voltage - Rated DC :
60V
Pbfree Code :
yes
Transistor Application :
AMPLIFIER
Pin Count :
3
ECCN Code :
EAR99
Power - Max :
1.25W
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Power Dissipation :
65W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Package / Case :
TO-225AA, TO-126-3
Surface Mount :
No
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
500mV
Mounting Type :
Through Hole
hFE Min :
25
Element Configuration :
Single
Packaging :
Bulk
Number of Terminations :
3
Max Collector Current :
1.5A
REACH SVHC :
No SVHC
Published :
2001
Transistor Type :
NPN
Weight :
4.535924g
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Collector Base Voltage (VCBO) :
60V
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
260
Max Power Dissipation :
1.25W
Collector Emitter Voltage (VCEO) :
60V
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Current Rating :
6A
Base Part Number :
BD137
Operating Temperature :
-55°C~150°C TJ
Length :
7.74mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Width :
2.66mm
Factory Lead Time :
2 Weeks
Collector Emitter Breakdown Voltage :
60V
Height :
11.04mm
Introducing Transistors - Bipolar (BJT) - Single onsemi BD137 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:BD137, Operating Temperature:-55°C~150°C TJ, BD137 pinout, BD137 datasheet PDF, BD137 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD137 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD137


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD137G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 1.5A volts at its maximum.

BD137G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 6A


BD137G Applications


There are a lot of ON Semiconductor
BD137G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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