BD137
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- Mfr.Part #
- BD137
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126
- Stock
- 43,752
- In Stock ：
- 43,752
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 11.04mm
- Width :
- 2.66mm
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2001
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Surface Mount :
- No
- Power Dissipation :
- 65W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 25
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Current Rating :
- 6A
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BD137
- Element Configuration :
- Single
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 1.25W
- Length :
- 7.74mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 1.5A
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Power - Max :
- 1.25W
- Pin Count :
- 3
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Datasheets
- BD137
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NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD137G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 1.5A volts at its maximum.
BD137G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 6A
BD137G Applications
There are a lot of ON Semiconductor
BD137G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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