BD136G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Max Collector Current :

1.5A

Pbfree Code :

yes

Height :

11.0998mm

Base Part Number :

BD136

Max Power Dissipation :

1.25W

Transistor Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

45V

hFE Min :

25

Lead Free :

Lead Free

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

45V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-45V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Collector Emitter Saturation Voltage :

500mV

REACH SVHC :

No SVHC

Current Rating :

-1.5A

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Packaging :

Bulk

Mounting Type :

Through Hole

Package / Case :

TO-225AA, TO-126-3

Factory Lead Time :

4 Weeks

Power Dissipation :

1.25W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

4.535924g

Length :

7.7978mm

Pin Count :

3

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

45V

Width :

2.9972mm

Polarity/Channel Type :

PNP