BD136G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-1.5A

Published :

2011

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

500mV

Length :

7.7978mm

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

45V

Factory Lead Time :

4 Weeks

Number of Pins :

3

Radiation Hardening :

No

Height :

11.0998mm

Lead Free :

Lead Free

Package / Case :

TO-225AA, TO-126-3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

45V

Number of Elements :

1

ECCN Code :

EAR99

Surface Mount :

No

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Width :

2.9972mm

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

PNP

REACH SVHC :

No SVHC

Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

hFE Min :

25

Polarity/Channel Type :

PNP

Max Power Dissipation :

1.25W

Weight :

4.535924g

Number of Terminations :

3

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Max Collector Current :

1.5A

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

45V

Packaging :

Bulk

Voltage - Rated DC :

-45V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BD136