BD136G

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Mfr.Part #
BD136G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 45V 1.5A TO126
Stock
3,946
In Stock :
3,946

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1.25W
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
25
Mounting Type :
Through Hole
Base Part Number :
BD136
Pin Count :
3
Packaging :
Bulk
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
45V
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
45V
Transistor Type :
PNP
Length :
7.7978mm
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
1.25W
Voltage - Rated DC :
-45V
Surface Mount :
No
Package / Case :
TO-225AA, TO-126-3
Height :
11.0998mm
Weight :
4.535924g
Collector Base Voltage (VCBO) :
45V
Collector Emitter Saturation Voltage :
500mV
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Terminations :
3
Transistor Application :
AMPLIFIER
Peak Reflow Temperature (Cel) :
260
Current Rating :
-1.5A
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Pbfree Code :
yes
Max Collector Current :
1.5A
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2011
Width :
2.9972mm
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Number of Elements :
1
Radiation Hardening :
No
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Factory Lead Time :
4 Weeks
Element Configuration :
Single
Introducing Transistors - Bipolar (BJT) - Single onsemi BD136G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BD136, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, BD136G pinout, BD136G datasheet PDF, BD136G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD136G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD136G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD136G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 1.5A volts.

BD136G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A


BD136G Applications


There are a lot of ON Semiconductor
BD136G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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