BD13616STU
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- Mfr.Part #
- BD13616STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 1.5A TO126-3
- Stock
- 23,871
- In Stock ：
- 23,871
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 761mg
- Base Part Number :
- BD136
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Width :
- 3.25mm
- Transition Frequency :
- 75MHz
- Height :
- 11mm
- Published :
- 2000
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 19 Weeks
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- -45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Collector Current :
- 1.5A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.25W
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Packaging :
- Tube
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 12.5W
- Collector Emitter Saturation Voltage :
- -500mV
- Voltage - Rated DC :
- -45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 350V
- Current Rating :
- -1.5A
- Package / Case :
- TO-225AA, TO-126-3
- Length :
- 8mm
- Datasheets
- BD13616STU
BD13616STU Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD13616STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 75MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13616STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz
BD13616STU Applications
There are a lot of ON Semiconductor
BD13616STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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