BD13610S

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Mfr.Part #
BD13610S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 45V 1.5A TO126-3
Stock
4,111
In Stock :
4,111

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
45V
Package / Case :
TO-225AA, TO-126-3
Voltage - Rated DC :
-45V
hFE Min :
40
Voltage :
80V
Max Power Dissipation :
1.25W
Weight :
760.986249mg
Max Collector Current :
1.5A
Packaging :
Bulk
Collector Emitter Saturation Voltage :
-500mV
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
ECCN Code :
EAR99
Current :
15A
Polarity/Channel Type :
PNP
Mounting Type :
Through Hole
Current Rating :
-1.5A
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Number of Pins :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Element Configuration :
Single
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Transistor Application :
SWITCHING
Transition Frequency :
75MHz
Lead Free :
Lead Free
Factory Lead Time :
2 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Collector Base Voltage (VCBO) :
45V
Power Dissipation :
1.25W
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
Radiation Hardening :
No
Contact Plating :
Tin
Collector Emitter Voltage (VCEO) :
45V
Base Part Number :
BD136
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13610S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Voltage:80V, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BD136, BD13610S pinout, BD13610S datasheet PDF, BD13610S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13610S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13610S


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD13610S Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).75MHz is present in the transition frequency.Maximum collector currents can be below 1.5A volts.

BD13610S Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 75MHz


BD13610S Applications


There are a lot of ON Semiconductor
BD13610S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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