BD13610S
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- Mfr.Part #
- BD13610S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 1.5A TO126-3
- Stock
- 4,111
- In Stock ：
- 4,111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.25W
- Weight :
- 760.986249mg
- Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -500mV
- Base Part Number :
- BD136
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- hFE Min :
- 40
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -45V
- Current Rating :
- -1.5A
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Bulk
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current :
- 15A
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 75MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Power Dissipation :
- 1.25W
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Datasheets
- BD13610S
BD13610S Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD13610S Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).75MHz is present in the transition frequency.Maximum collector currents can be below 1.5A volts.
BD13610S Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 75MHz
BD13610S Applications
There are a lot of ON Semiconductor
BD13610S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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