BCW89
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- Mfr.Part #
- BCW89
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 39,978
- In Stock ：
- 39,978
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2003
- Weight :
- 30mg
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Current Rating :
- 200mA
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -300mV
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 930μm
- Max Power Dissipation :
- 350mW
- Terminal Position :
- Dual
- Base Part Number :
- BCW89
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 500mA
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time :
- 39 Weeks
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- -60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Width :
- 1.3mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 2.92mm
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- hFE Min :
- 120
- Datasheets
- BCW89
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCW89 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is 200mA
BCW89 Applications
There are a lot of ON Semiconductor
BCW89 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BCW81 TR | onsemi | 37,997 | BCW81 TR |
| BCW89 | onsemi | 39,978 | TRANS PNP 60V 0.5A SOT23-3 |
| BCW89,215 | onsemi | 43,010 | TRANS PNP 60V 0.1A TO236AB |
| BCW89,215 | onsemi | 43,010 | NEXPERIA BCW89 - SMALL SIGNAL BI |
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