BCW89
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- Mfr.Part #
- BCW89
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 39,978
- In Stock ：
- 39,978
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BCW89
- Width :
- 1.3mm
- Max Power Dissipation :
- 350mW
- Number of Pins :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Weight :
- 30mg
- Number of Terminations :
- 3
- Power Dissipation :
- 350mW
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 120
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -60V
- Length :
- 2.92mm
- Qualification Status :
- Not Qualified
- Published :
- 2003
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Current Rating :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Height :
- 930μm
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Factory Lead Time :
- 39 Weeks
- Collector Base Voltage (VCBO) :
- -60V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -300mV
- Mount :
- Surface Mount
- Datasheets
- BCW89
BCW89 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCW89 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is 200mA
BCW89 Applications
There are a lot of ON Semiconductor
BCW89 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BCW81 TR | onsemi | 37,997 | BCW81 TR |
| BCW89 | onsemi | 39,978 | TRANS PNP 60V 0.5A SOT23-3 |
| BCW89,215 | onsemi | 43,010 | TRANS PNP 60V 0.1A TO236AB |
| BCW89,215 | onsemi | 43,010 | NEXPERIA BCW89 - SMALL SIGNAL BI |
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