BCW89
- Mfr.Part #
- BCW89
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 39,978
- In Stock :
- 39,978
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 39 Weeks
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Current Rating :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Length :
- 2.92mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Height :
- 930μm
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Base Part Number :
- BCW89
- Voltage - Rated DC :
- -60V
- Power Dissipation :
- 350mW
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 350mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- PNP
- Published :
- 2003
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -60V
- Max Collector Current :
- 500mA
- hFE Min :
- 120
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Terminations :
- 3
- Width :
- 1.3mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BCW89
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCW89 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is 200mA
BCW89 Applications
There are a lot of ON Semiconductor
BCW89 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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