BCW89,215
- Mfr.Part #
- BCW89,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.1A TO236AB
- Stock
- 43,010
- In Stock :
- 43,010
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Base Part Number :
- BCW89
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Power Dissipation :
- 250mW
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Power Dissipation :
- 250mW
- Datasheets
- BCW89,215

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 100mA volts.
BCW89,215 Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCW89,215 Applications
There are a lot of Nexperia USA Inc.
BCW89,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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