BCW89,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

80V

Mount :

Surface Mount

ECCN Code :

EAR99

Pin Count :

3

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Element Configuration :

Single

Transition Frequency :

150MHz

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

60V

Published :

2009

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Max Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Power Dissipation :

250mW

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Type :

PNP

Number of Pins :

3

Gain Bandwidth Product :

150MHz

Max Power Dissipation :

250mW

Contact Plating :

Tin

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Base Part Number :

BCW89

Frequency :

150MHz

Polarity/Channel Type :

PNP

Series :

Automotive, AEC-Q101

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 5V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Lead Free :

Lead Free

Number of Elements :

1