BCW89,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

5V

Terminal Position :

Dual

Frequency :

150MHz

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

60V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

80V

Gain Bandwidth Product :

150MHz

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

60V

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Operating Temperature :

150°C TJ

Published :

2009

Element Configuration :

Single

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Contact Plating :

Tin

Max Breakdown Voltage :

60V

Number of Terminations :

3

Pin Count :

3

Max Power Dissipation :

250mW

Transition Frequency :

150MHz

Power Dissipation :

250mW

Base Part Number :

BCW89

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Number of Pins :

3

Transistor Application :

SWITCHING