BCW33LT3G
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- Mfr.Part #
- BCW33LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23-3
- Stock
- 36,709
- In Stock ：
- 36,709
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 420
- Collector Emitter Breakdown Voltage :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 100mA
- Surface Mount :
- yes
- Base Part Number :
- BCW33
- Width :
- 2.64mm
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.11mm
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.04mm
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 225mW
- Number of Terminations :
- 3
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 32V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- 32V
- Terminal Position :
- Dual
- Max Frequency :
- 1MHz
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Published :
- 2005
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Datasheets
- BCW33LT3G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW33LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.
BCW33LT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
BCW33LT3G Applications
There are a lot of ON Semiconductor
BCW33LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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