BCW30,235
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- Mfr.Part #
- BCW30,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A TO236AB
- Stock
- 9,980
- In Stock ：
- 9,980
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Power Dissipation :
- 250mW
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCW30
- Collector Emitter Voltage (VCEO) :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 32V
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BCW30,235
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW30,235 Overview
In this device, the DC current gain is 215 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 2.5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW30,235 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW30,235 Applications
There are a lot of Nexperia USA Inc.
BCW30,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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