BCW30LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

Pin Count :

3

Number of Terminations :

3

Max Power Dissipation :

225mW

Base Part Number :

BCW30

Contact Plating :

Tin

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

32V

Number of Pins :

3

Voltage - Rated DC :

-32V

Current Rating :

-100mA

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

-300mV

Max Breakdown Voltage :

32V

Surface Mount :

yes

Radiation Hardening :

No

Terminal Position :

Dual

REACH SVHC :

No SVHC

Number of Elements :

1

JESD-609 Code :

e3

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

32V

Published :

1999

Mounting Type :

Surface Mount

Factory Lead Time :

2 Weeks

Packaging :

Tape and Reel (TR)

Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

32V

Element Configuration :

Single

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

5V

hFE Min :

215

Current - Collector Cutoff (Max) :

100nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Collector Current :

100mA

Pbfree Code :

yes