BCW30LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Number of Pins :

3

Power Dissipation :

300mW

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

32V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Position :

Dual

hFE Min :

215

JESD-609 Code :

e3

Factory Lead Time :

2 Weeks

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BCW30

Published :

1999

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Number of Terminations :

3

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

32V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Pin Count :

3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

Max Breakdown Voltage :

32V

Current Rating :

-100mA

Collector Emitter Breakdown Voltage :

32V

Radiation Hardening :

No

Number of Elements :

1

Max Power Dissipation :

225mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-32V

Contact Plating :

Tin

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-300mV