BCW31,215
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- Mfr.Part #
- BCW31,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 4,722
- In Stock ：
- 4,722
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 32V
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 250mW
- Transistor Type :
- NPN
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 32V
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Base Part Number :
- BCW31
- JESD-609 Code :
- e3
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 110
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BCW31,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW31,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 210mV @ 2.5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 100mA volts.
BCW31,215 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW31,215 Applications
There are a lot of Nexperia USA Inc.
BCW31,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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