BCW31,215
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- Mfr.Part #
- BCW31,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 4,722
- In Stock ：
- 4,722
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 32V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- hFE Min :
- 110
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 250mW
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 32V
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BCW31
- Collector Base Voltage (VCBO) :
- 32V
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Datasheets
- BCW31,215
BCW31,215 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW31,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 210mV @ 2.5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 100mA volts.
BCW31,215 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW31,215 Applications
There are a lot of Nexperia USA Inc.
BCW31,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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