BCW30,215
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- Mfr.Part #
- BCW30,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA BCW30 - SMALL SIGNA
- Stock
- 819
- In Stock ：
- 819
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Frequency - Transition :
- 100MHz
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.95
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- BCW30
- Published :
- 1996
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Qualification Status :
- Not Qualified
- Power - Max :
- 250mW
- Datasheets
- BCW30,215
BCW30,215 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW30,215 Overview
DC current gain in this device equals 215 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 2.5mA, 50mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCW30,215 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
a transition frequency of 100MHz
BCW30,215 Applications
There are a lot of Nexperia USA Inc.
BCW30,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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