BCW33LT1G
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- Mfr.Part #
- BCW33LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23-3
- Stock
- 5,414
- In Stock ：
- 5,414
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Base Part Number :
- BCW33
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Max Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 420
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 250mV
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 32V
- Surface Mount :
- yes
- Height :
- 940μm
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- 32V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Application :
- SWITCHING
- Datasheets
- BCW33LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW33LT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500μA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW33LT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
BCW33LT1G Applications
There are a lot of ON Semiconductor
BCW33LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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