BCW32LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

250mV

Transistor Element Material :

SILICON

Max Frequency :

1MHz

Width :

1.4mm

Number of Pins :

3

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

32V

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)

Collector Emitter Voltage (VCEO) :

32V

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Published :

2005

Current Rating :

100mA

Base Part Number :

BCW32

Max Breakdown Voltage :

32V

Max Power Dissipation :

225mW

Pin Count :

3

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Collector Current :

100mA

Number of Terminations :

3

Polarity/Channel Type :

NPN

Number of Elements :

1

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

hFE Min :

200

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Height :

1.11mm

Pbfree Code :

yes

Surface Mount :

yes

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

32V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

32V

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

3.04mm