BCW32LT1G
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- Mfr.Part #
- BCW32LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23-3
- Stock
- 373
- In Stock ：
- 373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Pin Count :
- 3
- Height :
- 1.11mm
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Max Frequency :
- 1MHz
- Lead Free :
- Lead Free
- Length :
- 3.04mm
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BCW32
- Collector Emitter Voltage (VCEO) :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 250mV
- Max Breakdown Voltage :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- Max Collector Current :
- 100mA
- Power Dissipation :
- 300mW
- Max Power Dissipation :
- 225mW
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 hours ago)
- hFE Min :
- 200
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Radiation Hardening :
- No
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 32V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Datasheets
- BCW32LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW32LT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 500μA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.Breakdown input voltage is 32V volts.In extreme cases, the collector current can be as low as 100mA volts.
BCW32LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
BCW32LT1G Applications
There are a lot of ON Semiconductor
BCW32LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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