BCW32LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Radiation Hardening :

No

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

32V

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

1.4mm

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

32V

Max Collector Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Max Breakdown Voltage :

32V

hFE Min :

200

Current Rating :

100mA

Max Frequency :

1MHz

Number of Pins :

3

Polarity/Channel Type :

NPN

Pin Count :

3

Voltage - Rated DC :

32V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BCW32

Lead Free :

Lead Free

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Length :

3.04mm

Published :

2005

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

32V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Max Power Dissipation :

225mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

REACH SVHC :

No SVHC

Height :

1.11mm

Transistor Type :

NPN

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON