BCW32,235
- Mfr.Part #
- BCW32,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 10,000
- In Stock :
- 10,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 32V
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BCW32
- Factory Lead Time :
- 4 Weeks
- Published :
- 2005
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Max Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Datasheets
- BCW32,235

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW32,235 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 210mV @ 2.5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BCW32,235 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW32,235 Applications
There are a lot of Nexperia USA Inc.
BCW32,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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