BCW 66H E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

R-PDSO-G3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Power Dissipation-Max (Abs) :

0.33W

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

45V

Current - Collector Cutoff (Max) :

20nA ICBO

Frequency - Transition :

170MHz

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Configuration :

Single

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Terminal Position :

Dual

Transition Frequency :

170MHz

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Number of Elements :

1

Power - Max :

330mW

Published :

2011

Vce Saturation (Max) @ Ib, Ic :

450mV @ 50mA, 500mA

Base Part Number :

BCW66

Current - Collector (Ic) (Max) :

800mA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)