BCW29,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Transition Frequency :

100MHz

Power Dissipation :

250mW

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

100MHz

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Transistor Type :

PNP

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Mount :

Surface Mount

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Number of Elements :

1

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Element Configuration :

Single

Max Breakdown Voltage :

32V

Gain Bandwidth Product :

100MHz

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101

Base Part Number :

BCW29

Transistor Element Material :

SILICON

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 5V

ECCN Code :

EAR99

Published :

2009

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

32V

Collector Emitter Breakdown Voltage :

32V

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Pin Count :

3

Collector Emitter Voltage (VCEO) :

32V

Package / Case :

TO-236-3, SC-59, SOT-23-3