BCW 66G E6327

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Mfr.Part #
BCW 66G E6327
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.8A SOT23
Stock
18,847
In Stock :
18,847

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation-Max (Abs) :
0.33W
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Current - Collector (Ic) (Max) :
800mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
RoHS Compliant
Surface Mount :
yes
Vce Saturation (Max) @ Ib, Ic :
450mV @ 50mA, 500mA
Power - Max :
330mW
Published :
2011
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Number of Terminations :
3
Transition Frequency :
170MHz
Configuration :
Single
Transistor Type :
NPN
Base Part Number :
BCW66
Terminal Form :
Gull wing
JESD-30 Code :
R-PDSO-G3
Reach Compliance Code :
Compliant
Frequency - Transition :
170MHz
Current - Collector Cutoff (Max) :
20nA ICBO
Number of Elements :
1
Terminal Position :
Dual
Mounting Type :
Surface Mount
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
45V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BCW 66G E6327
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCW 66G E6327 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Base Part Number:BCW66, Mounting Type:Surface Mount, BCW 66G E6327 pinout, BCW 66G E6327 datasheet PDF, BCW 66G E6327 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCW 66G E6327 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCW 66G E6327


NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCW 66G E6327 Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 50mA, 500mA.170MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.

BCW 66G E6327 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
a transition frequency of 170MHz


BCW 66G E6327 Applications


There are a lot of Infineon Technologies
BCW 66G E6327 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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