BCW 66G E6327
- Mfr.Part #
- BCW 66G E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23
- Stock
- 18,847
- In Stock :
- 18,847
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 0.33W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 800mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Power - Max :
- 330mW
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transition Frequency :
- 170MHz
- Configuration :
- Single
- Transistor Type :
- NPN
- Base Part Number :
- BCW66
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PDSO-G3
- Reach Compliance Code :
- Compliant
- Frequency - Transition :
- 170MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCW 66G E6327

NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW 66G E6327 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 50mA, 500mA.170MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BCW 66G E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
a transition frequency of 170MHz
BCW 66G E6327 Applications
There are a lot of Infineon Technologies
BCW 66G E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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