BCW 66H B6327
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- Mfr.Part #
- BCW 66H B6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23
- Stock
- 23,528
- In Stock ：
- 23,528
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2011
- Power - Max :
- 330mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Base Part Number :
- BCW66
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 170MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Current - Collector (Ic) (Max) :
- 800mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCW 66H B6327
NPN 150°C TJ 20nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW 66H B6327 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (45V maximal voltage).
BCW 66H B6327 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
BCW 66H B6327 Applications
There are a lot of Infineon Technologies
BCW 66H B6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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