BCV49H6327XTSA1
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- Mfr.Part #
- BCV49H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT89
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Frequency - Transition :
- 150MHz
- Max Collector Current :
- 500mA
- Terminal Form :
- Flat
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Factory Lead Time :
- 26 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 150MHz
- Published :
- 2011
- Power - Max :
- 1W
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 2000
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-243AA
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 10V
- Datasheets
- BCV49H6327XTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BCV49H6327XTSA1 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV49H6327XTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 150MHz
BCV49H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCV49H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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