BCV46E6327HTSA1
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- Mfr.Part #
- BCV46E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 0.5A SOT23
- Stock
- 469
- In Stock ：
- 469
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 900μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Frequency - Transition :
- 200MHz
- Voltage :
- 60V
- Current :
- 5A
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 1V
- hFE Min :
- 2000
- Current Rating :
- -500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -60V
- Factory Lead Time :
- 26 Weeks
- Halogen Free :
- Not Halogen Free
- Transistor Type :
- PNP - Darlington
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 10V
- Max Collector Current :
- 500mA
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 1V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Max Power Dissipation :
- 360mW
- Number of Terminations :
- 3
- Base Part Number :
- BCV46
- Published :
- 2011
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 60V
- Power - Max :
- 360mW
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Length :
- 2.9mm
- Number of Elements :
- 1
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Polarity :
- PNP
- Datasheets
- BCV46E6327HTSA1
PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV46E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
BCV46E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV46E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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