BCV46E6327HTSA1
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- Mfr.Part #
- BCV46E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 0.5A SOT23
- Stock
- 469
- In Stock ：
- 469
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 1V
- Mount :
- Surface Mount
- Width :
- 1.3mm
- Lead Free :
- Lead Free
- Current :
- 5A
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Type :
- PNP - Darlington
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 26 Weeks
- Base Part Number :
- BCV46
- Collector Base Voltage (VCBO) :
- 80V
- Power - Max :
- 360mW
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -60V
- Published :
- 2011
- Polarity :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Voltage :
- 60V
- Height :
- 900μm
- Frequency - Transition :
- 200MHz
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 60V
- hFE Min :
- 2000
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Current Rating :
- -500mA
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Halogen Free :
- Not Halogen Free
- Max Power Dissipation :
- 360mW
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Datasheets
- BCV46E6327HTSA1
BCV46E6327HTSA1 Documents
PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV46E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
BCV46E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV46E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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