BCV46E6327HTSA1
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- Mfr.Part #
- BCV46E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 0.5A SOT23
- Stock
- 469
- In Stock ：
- 469
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 1V
- Factory Lead Time :
- 26 Weeks
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Width :
- 1.3mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -60V
- Current Rating :
- -500mA
- Base Part Number :
- BCV46
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Polarity :
- PNP
- Power - Max :
- 360mW
- Length :
- 2.9mm
- Voltage :
- 60V
- Frequency - Transition :
- 200MHz
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 360mW
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Not Halogen Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Current :
- 5A
- hFE Min :
- 2000
- Emitter Base Voltage (VEBO) :
- 10V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- PNP - Darlington
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Height :
- 900μm
- Published :
- 2011
- Number of Pins :
- 3
- Datasheets
- BCV46E6327HTSA1
BCV46E6327HTSA1 Documents
PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV46E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
BCV46E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV46E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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