BCV46E6327HTSA1

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Mfr.Part #
BCV46E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP DARL 60V 0.5A SOT23
Stock
469
In Stock :
469

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
1V
Mount :
Surface Mount
Width :
1.3mm
Lead Free :
Lead Free
Current :
5A
Operating Temperature :
150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
JESD-609 Code :
e3
Number of Elements :
1
Transistor Type :
PNP - Darlington
Max Collector Current :
500mA
Factory Lead Time :
26 Weeks
Base Part Number :
BCV46
Collector Base Voltage (VCBO) :
80V
Power - Max :
360mW
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Voltage - Rated DC :
-60V
Published :
2011
Polarity :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Emitter Base Voltage (VEBO) :
10V
Terminal Finish :
Tin (Sn)
Voltage :
60V
Height :
900μm
Frequency - Transition :
200MHz
Radiation Hardening :
No
Max Breakdown Voltage :
60V
hFE Min :
2000
Mounting Type :
Surface Mount
Collector Emitter Breakdown Voltage :
60V
Packaging :
Tape and Reel (TR)
Length :
2.9mm
ECCN Code :
EAR99
Number of Terminations :
3
Current Rating :
-500mA
Collector Emitter Saturation Voltage :
1V
Transistor Element Material :
SILICON
Number of Pins :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Vce Saturation (Max) @ Ib, Ic :
1V @ 100μA, 100mA
Halogen Free :
Not Halogen Free
Max Power Dissipation :
360mW
Terminal Position :
Dual
Terminal Form :
Gull wing
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCV46E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:BCV46, Voltage:60V, Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, BCV46E6327HTSA1 pinout, BCV46E6327HTSA1 datasheet PDF, BCV46E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCV46E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCV46E6327HTSA1


PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCV46E6327HTSA1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.

BCV46E6327HTSA1 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz


BCV46E6327HTSA1 Applications


There are a lot of Infineon Technologies
BCV46E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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