BCV47E6327HTSA1
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- Mfr.Part #
- BCV47E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT23
- Stock
- 27,802
- In Stock ：
- 27,802
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 10000
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 26 Weeks
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 60V
- Max Power Dissipation :
- 360mW
- Current Rating :
- 500mA
- Height :
- 1.1mm
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Number of Elements :
- 1
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Polarity :
- NPN
- Width :
- 1.3mm
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Frequency - Transition :
- 170MHz
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 360mW
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 170MHz
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Base Part Number :
- BCV47
- JESD-609 Code :
- e3
- Halogen Free :
- Not Halogen Free
- Transistor Type :
- NPN - Darlington
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Datasheets
- BCV47E6327HTSA1
BCV47E6327HTSA1 Documents
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV47E6327HTSA1 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 170MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
BCV47E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV47E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV47E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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