BCV47E6327HTSA1

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Mfr.Part #
BCV47E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN DARL 60V 0.5A SOT23
Stock
27,802
In Stock :
27,802

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Transition Frequency :
170MHz
Current Rating :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Max Power Dissipation :
360mW
Emitter Base Voltage (VEBO) :
10V
Max Collector Current :
500mA
Width :
1.3mm
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Published :
2011
Base Part Number :
BCV47
Polarity :
NPN
hFE Min :
10000
Mount :
Surface Mount
Radiation Hardening :
No
Voltage - Rated DC :
60V
Number of Elements :
1
Transistor Type :
NPN - Darlington
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
Dual
Max Junction Temperature (Tj) :
150°C
Collector Emitter Saturation Voltage :
1V
Contact Plating :
Tin
Frequency - Transition :
170MHz
Collector Emitter Breakdown Voltage :
60V
Power Dissipation :
360mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Lead Free :
Lead Free
Element Configuration :
Single
Max Breakdown Voltage :
60V
Length :
2.9mm
Number of Pins :
3
Height :
1.1mm
Vce Saturation (Max) @ Ib, Ic :
1V @ 100μA, 100mA
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
60V
Halogen Free :
Not Halogen Free
Factory Lead Time :
26 Weeks
JESD-609 Code :
e3
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
80V
Datasheets
BCV47E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCV47E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Base Part Number:BCV47, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, BCV47E6327HTSA1 pinout, BCV47E6327HTSA1 datasheet PDF, BCV47E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCV47E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCV47E6327HTSA1


NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCV47E6327HTSA1 Overview


This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 170MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.

BCV47E6327HTSA1 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz


BCV47E6327HTSA1 Applications


There are a lot of Infineon Technologies
BCV47E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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