BCV47,235
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- Mfr.Part #
- BCV47,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A TO236AB
- Stock
- 11,881
- In Stock ：
- 11,881
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 80V
- Frequency - Transition :
- 220MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN - Darlington
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 220MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 10V
- Polarity :
- NPN
- Base Part Number :
- BCV47
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1V
- Power - Max :
- 250mW
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Number of Pins :
- 3
- Element Configuration :
- Single
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Datasheets
- BCV47,235
BCV47,235 Documents
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV47,235 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
BCV47,235 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz
BCV47,235 Applications
There are a lot of Nexperia USA Inc.
BCV47,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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